4‐2: Invited Paper: High Performance Top Gate Oxide TFT Technology for Large Area Flexible AMOLED Display
Author:
Affiliation:
1. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. Ltd. China
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.14600
Reference16 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;K Nomura;Nature,2004
2. Origins of high mobility and low operation voltage of amorphous oxide TFTs: electronic structure, electron transport, defects and doping;T Kamiya;J Display Technol,2009
3. Material characteristics and applications of transparent amorphous oxide semiconductors;T Kamiya;NPG Asia Mater,2010
4. Present status of amorphous In–Ga–Zn–O thin-film transistors;T Kamiya;Sci Technol Adv Mater,2010
5. Defect-permeation correlation for ultrathin transparent barrier coatings on polymers;ASDS Sobrinho;J Vac Sci Technol,2000
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