Raman study on dislocation in high Al content AlxGa1−xN
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap/2012120004/pdf
Reference18 articles.
1. 250nmAlGaN light-emitting diodes
2. High quantum efficiency AlGaN solar-blind p-i-n photodiodes
3. Solar blind detectors based on AlGaN grown on sapphire
4. Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe
5. AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire
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1. Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism;Semiconductor Science and Technology;2020-08-05
2. Excitation of gallium one-charged ion in e-Ga collisions;Journal of Physics B: Atomic, Molecular and Optical Physics;2015-07-10
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