The quantum Hall effect in modulation doped In0.53Ga 0.47As-InP heterojunctions
Author:
Publisher
EDP Sciences
Subject
General Engineering
Link
http://jphyslet.journaldephysique.org/10.1051/jphyslet:019820043016061300/pdf
Reference16 articles.
1. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
2. Determination of the Fine-Structure Constant Using GaAs-AlxGa1−xAsHeterostructures
3. Resistance standard using quantization of the Hall resistance of GaAs‐AlxGa1−xAs heterostructures
4. Effect of localization on the hall conductivity in the two-dimensional system in strong magnetic fields
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1. Quantum transport in high mobility modulation doped Ga0.25In0.75As/InP quantum wells;Journal of Applied Physics;1998-08-15
2. Electron spin resonance in In0.53Ga0.47As;Semiconductor Science and Technology;1995-09-01
3. Integral Quantum Hall Effect;The Quantum Hall Effects;1995
4. The Quantum Hall Effect;Basic Properties of Semiconductors;1992
5. Resource Letter QHE‐1: The integral and fractional quantum Hall effects;American Journal of Physics;1990-02
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