Resistance standard using quantization of the Hall resistance of GaAs‐AlxGa1−xAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92408
Reference11 articles.
1. Quantum galvanomagnetic properties of n-type inversion layers on Si(100) MOSFET
2. Analysis of ρxx minima in surface quantum oscillations on (100) n-type silicon inversion layers
3. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
4. Theory of Quantum Transport in a Two-Dimensional Electron System under Magnetic Fields. I. Characteristics of Level Broadening and Transport under Strong Fields
5. Theory of Hall Effect in a Two-Dimensional Electron System
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