Quantum galvanomagnetic properties of n-type inversion layers on Si(100) MOSFET-Reference-Cited by-同舟云学术

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Quantum galvanomagnetic properties of n-type inversion layers on Si(100) MOSFET

Published:1976-08 Issue:1 Volume:58 Page:238-245
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

KawajiI S.,Wakabayashi J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference14 articles.

1. Proc. Intern. Conf. on the Physics of Semiconductors;Fowler,1966

2. Proc. 2nd Intern. Conf. on Solid Surfaces;Uemura,1974

3. Proc. Intern. Conf. on Physics of Semiconductors;Uemura,1974

4. Proc. 2nd Intern. Conf. on Solid Surfaces;Stiles,1974

5. Transverse Magneto-Conductivity of a Two-Dimensional Electron Gas

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1. Magneto-Spectroscopy of Semiconductors;Comprehensive Semiconductor Science and Technology;2011

2. Experimental researches on quantum transport in semiconductor two-dimensional electron systems;Proceedings of the Japan Academy, Series B;2008

3. Temperature Dependence of Collapse of Quantized Hall Resistance;Journal of the Physical Society of Japan;2006-01-15

4. Thermohydrodynamics in Quantum Hall Systems;Journal of the Physical Society of Japan;2005-03

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