Structural and analytical characterization of Si1-x Gex /Si heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double crystal X-ray diffractometry-Reference-Cited by-同舟云学术

Structural and analytical characterization of Si1-x Gex /Si heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double crystal X-ray diffractometry

Published:1992 Issue:4 Volume:3 Page:363-384
ISSN:1154-2799
Container-title:Microscopy Microanalysis Microstructures
language:
Short-container-title:Microsc. Microanal. Microstruct.

Author:

Armigliato Aldo,Servidori Marco,Cembali Franco,Fabbri Rita,Rosa Rodolfo,Corticelli Franco,Govoni Donato,Drigo Antonio V.,Mazzer Massimo,Romanato Filippo,Frabboni Stefano,Balboni Roberto,Iyer Subramanian S.,Guerrieri Antonella

Publisher

EDP Sciences

Subject

Instrumentation

Link

http://mmm.edpsciences.org/10.1051/mmm:0199200304036300/pdf

Reference33 articles.

1. Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

2. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

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