Features of indirect-band-to-band tunneling in an insulated-gate lateral pn junction device on a SIMOX substrate with an ultrathin 10-nm-thick silicon layer
Author:
Publisher
EDP Sciences
Subject
General Physics and Astronomy
Link
http://jp4.journaldephysique.org/10.1051/jp4:1998315/pdf
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Supplementary Consideration ofI-VCharacteristics of Forward-Biased Ultra-Thin Lubistors;Soi Lubistors;2013-08-30
2. Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultrathin Silicon-on-Insulator Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistors;Japanese Journal of Applied Physics;2007-05-08
3. Quantum Effects and Devices;Device and Circuit Cryogenic Operation for Low Temperature Electronics;2001
4. Quantum Effect Devices on SOI Substrates with an Ultrathin Silicon Layer;Perspectives, Science and Technologies for Novel Silicon on Insulator Devices;2000
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