Quantum Effect Devices on SOI Substrates with an Ultrathin Silicon Layer-Reference-Cited by-同舟云学术

Quantum Effect Devices on SOI Substrates with an Ultrathin Silicon Layer

Published:2000 Issue: Volume: Page:257-268
ISSN:
Container-title:Perspectives, Science and Technologies for Novel Silicon on Insulator Devices
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Author:

Omura Yasuhisa

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-011-4261-8_25

Reference32 articles.

1. Yoshimi, M., Wada, T., Kato, K. and Tango, H.(1987) High performance SOI MOSFET using thin SOI film, Ext. Abstract of 1987 IEEEIEDM, 640–643.

2. Vasudev, P. K., Terrill, K. W. and Seymour, S.(1988) A High Performance Submicrometer CMOS/SOI Technology Using Ultrathin Silicon Films on SIMOX, Tech. Dig. of 1988 Symp. on VLSI Technol., 61–62.

3. Omura, Y., Nakashima, S., Izumi, K. and Ishii, T.(1991) 0.1-μm-Gate, Ultrathin-Film CMOS Devices Using SIMOX Substrate with 80-nm-Thick Buried Oxide Layer, Ext. Abstract of 1991 IEEEIEDM, 675–678.

4. Omura, Y., Horiguchi, S., Tabe, M. and Kishi, K.(1993) Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFET’s, IEEE Electron Devices Lett., 14, 569–571.

5. Izumi, K., Doken, M. and Ariyoshi, H.(1978) CMOS devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon, Electron. Lett., 14, 593–594.

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