Supplementary Consideration ofI-VCharacteristics of Forward-Biased Ultra-Thin Lubistors
Author:
Publisher
John Wiley & Sons Singapore Pte. Ltd.
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/9781118487914.ch13/fullpdf
Reference7 articles.
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2. Negative conductance properties in extremely thin silicon-on-insulator insulated-gate pn-junction devices (silicon-on-insulator surface tunnel transistor);Omura;Japanese Journal of Applied Physics,1996
3. Distinct two-dimensional carrier injection phenomena in extremely thin SOI insulated-gate pn-junction devices: prospect of new device applications;Omura;Superlattices and Microstructures,1998
4. Omura , Y. 1998 Features of Indirect-Band-to-Band Tunneling in an Insulated-Gate Lateral pn Junction Device on a SIMOX Substrate with an Ultrathin 10-nm-Thick Silicon Layer 67 70
5. Two-dimensional quantization effect on indirect tunneling in an insulated-gate lateral pn-junction structure with a thin silicon layer;Omura;Japanese Journal of Applied Physics,2000
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