Caractérisation physico-chimique et électrique de structures fluorure — semi-conducteur III-V (passivation de GaAs et InP)
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Publisher
EDP Sciences
Link
http://rphysap.journaldephysique.org/10.1051/rphysap:0198800230106300/pdf
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1. Composition and texture of thin films grown under 1 bar of fluorine at the surface of GaAs;Thin Solid Films;1991-02
2. Characterization of Silicon Nitride Films Deposited on GaAs by RF Magnetron Cathodic Sputtering: Effects of Power Density and Total Gas Pressure;Journal of The Electrochemical Society;1990-05-01
3. Interface GaAs - gallium fluoride thin film grown by fluorination;Applied Surface Science;1990-01
4. Preparation and characterization of gallium(III) fluoride thin films;Thin Solid Films;1989-06
5. Physico-chemical characterization of thin films obtained by fluorination of GaAs under 5 bar of fluorine;Thin Solid Films;1989-03
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