Characterization of Silicon Nitride Films Deposited on GaAs by RF Magnetron Cathodic Sputtering: Effects of Power Density and Total Gas Pressure-Reference-Cited by-同舟云学术

Characterization of Silicon Nitride Films Deposited on GaAs by RF Magnetron Cathodic Sputtering: Effects of Power Density and Total Gas Pressure

Published:1990-05-01 Issue:5 Volume:137 Page:1582-1587
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Carriere T.¹²³,Agius B.¹²³,Vickridge I.¹²³,Siejka J.¹²³,Alnot P.¹²³

Affiliation:

1. Institut Universitaire de Technologie, Université de Paris Sud (XI), Plateau du Moulon, 91406 Orsay Cedex, France

2. Groupe de Physique des Solides de l'Université de Paris VII‐Tour 23, Paris Cedex 05, France

3. L.C.R. Thomson‐CSF, Domaine de Corbeville, 91401 Orsay Cedex, France

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2086731/pdf

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