Influence and passivation of extended crystallographic defects in polycrystalline silicon-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Influence and passivation of extended crystallographic defects in polycrystalline silicon

Published:1987 Issue:7 Volume:22 Page:637-643
ISSN:0035-1687
Container-title:Revue de Physique Appliquée
language:
Short-container-title:Rev. Phys. Appl. (Paris)

Author:

Martinuzzi S.

Publisher

EDP Sciences

Link

http://rphysap.journaldephysique.org/10.1051/rphysap:01987002207063700/pdf

Reference30 articles.

1. Photocurrent and diffusion lengths at the vicinity of grain boundaries (g.b.) in N and P-type polysilicon. Evaluation of the g.b. recombination velocity)

2. Effects of grain boundaries in polycrystalline solar cells

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Accurate analytical model for effective carrier mobility of fully hydrogenated poly-si TFTs under White light illumination;Optik;2019-10

2. Improvement in the light conversion efficiency of silicon solar cells by pure hydrogen annealing;Materials Science in Semiconductor Processing;2015-11

3. Study of different thermal processes on boron-doped PERL cells;Applied Surface Science;2014-08

4. Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy;Journal of Applied Physics;2012-08

5. Effect of MW-ECR plasma hydrogenation on polysilicon films based solar cells;Energy Procedia;2010-08

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3