Affiliation:
1. Nomura Micro Science Co., Ltd.
2. Tohoku University
Abstract
A large amount of chemicals and ultrapure water (UPW) have been used for wet cleaning process in the semiconductor manufacturing processes. One of the most commonly used cleaning solutions is Sulfuric acid (H2SO4) and Hydrogen Peroxide (H2O2) Mixture (SPM). It is used for resist stripping, etc. on a silicon wafer. As the cleaning process increases, so does the amount of chemicals used with the recent miniaturization. As a result, wastewater will also increase, and there are concerns about the impact on the environmental aspects. The technologies to reduce H2SO4 [1, 2] have been developed, but its consumption still persists. Therefore, in this paper, we developed high concentrated O3-water without using H2SO4, and conducted a resist stripping test verify its effectiveness as an alternative to SPM.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics