Ultrafine Particle Removal in the Wafer Cleaning Process Using an Aqueous Solution with a High Concentration of Dissolved O3 and HF

Author:

Han Hyeon Joon1,Lee Hunhee1,Kim Charles1,Kim Yongmok1,Moon Jinok1,Ahn Dukmin1,Hong Seokjun2,Kim Taesung1

Affiliation:

1. Samsung Electronics Co.

2. Sungkyunkwan University

Abstract

Sulfuric Peroxide Mixture (SPM, H2SO4 + H2O2) has been widely used in semiconductor manufacturing processes due to its high reactivity and attractive price. However, SPM releases SO42- ions that can be high impact on the environmental contaminations. Therefore, the SPM process requires a high cost wastewater treatment. So, the development of alternative chemicals has been becoming an important task in the semiconductor manufacturing process. In this paper, we evaluated the feasibility of replacing SPM with dissolved ozone water (DIO3) in the wafer cleaning process, and confirmed that the Particle removal efficiency (PRE) was improved around 68% by mixing with diluted hydrofluoric acid (DHF). And, the PRE was also increased when the concentration of ozone in dissolved ozone water increased. Additionally the PRE was improved up to 98% by combining physical cleaning after O3 process.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Reference7 articles.

1. Kern, W: Handbook of semiconductor wafer cleaning technology (Noyes Publication, New jersey, 1993): pp.111-196.

2. S.Y. Mun, K.C. Yoon and B.W. An: JJAP 41(12) (2002), p.7529.

3. Haynes, W. M.: CRC handbook of chemistry and physics, CRC press (2014).

4. Zhijie Lü et al.: J. Ceramic Processing Research. 18 (2017), P. 416.

5. S. Verhaverbeke et al.: J. Electrochem.I Soc. 141 (1994), P. 2852.

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