Affiliation:
1. Fraunhofer Institute for Integrated Systems and Device Technology (IISB)
2. mi2-factroy GmbH
3. Kwangwoon University
4. Pohang University of Science and Technology (POSTECH)
Abstract
In this paper, the modeling of SJ-MOSFETs beyond the voltage class of 3.3 kV simulated with verified deep aluminum box-like shaped profiles by using TCAD simulation is described. The simulation results are used to investigate the influence of ion implantation parameters on electrical characteristics. For the formation of pillar regions, high energy implantation is performed through energy filter with a multi epitaxial growth method using a patterned mask. While high thickness of epitaxial layer is indispensable for obtaining a high blocking capability, it is revealed that the optimization of doping concentration of p-pillar and drift layer parameters yields similar on-state-resistance by charge compensations of SJ-structure.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
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