Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide
Author:
Publisher
Elsevier BV
Subject
Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Silicon carbide materials, processing, and devices;Rao,2004
2. Doping of SiC by Implantation of Boron and Aluminum
3. Al, B, and Ga ion-implantation doping of SiC
4. Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation
5. Process technology for silicon carbide devices;Schöner,2002
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