Affiliation:
1. Fraunhofer Institute for Integrated Systems and Device Technology (IISB)
Abstract
In this work, an empirical model of structural and material composition of low-ohmic nickel silicide contact formation on n-type 4H-SiC by laser annealing as well as by RTA is presented. For this purpose, systematic studies with different annealing parameters were performed. The development of the empirical model is based on results from characterization of the nickel silicide by FIB-SEM, TEM, XRD analysis as well as electrical characteristics received from 4-point-measurements.
Publisher
Trans Tech Publications, Ltd.
Cited by
1 articles.
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