Laser backside contact annealing of SiC power devices: A prerequisite for SiC thin wafer technology-Reference-Cited by-同舟云学术

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Laser backside contact annealing of SiC power devices: A prerequisite for SiC thin wafer technology

Published:2013-05 Issue: Volume: Page:
ISSN:
Container-title:2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Rupp R.,Kern R.,Gerlach R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6684693/6694389/06694396.pdf?arnumber=6694396

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