A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC
Author:
Funder
Knut och Alice Wallenbergs Stiftelse (Knut and Alice Wallenberg Foundation)
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference20 articles.
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4. 5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension
5. Metal Silicides in CMOS Technology: Past, Present, and Future Trends
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