Affiliation:
1. Fraunhofer Institute of Integrated Systems and Device Technology (IISB)
2. AIXTRON SE
Abstract
The feasibility of thin 4H-SiC layers bonded on an alternative carrier substrate for the application as substrate in SiC epitaxy is investigated. Epitaxial layers grown on such substrates are compared to those on state-of-the-art conventional substrates from different sources. The performance of the substrates is judged by the occurrence of killer defects in the epitaxial layer as analyzed using a PL scanning tool. Additional investigations on the material properties were carried out using X-ray topography and Atomic Force Microscopy, yielding information on the crystallinity, the lattice curvature, and the surface properties of the epitaxial layers.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics