Aluminium Implantation Induced Linear Surface Faults in 4H-SiC

Author:

Wright Nicolas G.1,Vassilevski Konstantin1,Nikitina Irina P.1,Horsfall Alton B.1,Johnson C. Mark2,Bhatnagar Praneet1,Tappin Peter3

Affiliation:

1. Newcastle University

2. University of Nottingham

3. University of Newcastle upon Tyne

Abstract

New results are presented of a surface trench defect observed during anneal of room temperature Al implants. The size of the surface defect is proportional to anneal temperature and occurs predominantly in the implanted zone. Signs of lattice strain are observed outside the implanted zone as well.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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