Effectiveness of AlN encapsulant in annealing ion-implanted SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370798
Reference16 articles.
1. Progress in silicon carbide semiconductor electronics technology
2. Performance comparison of wide bandgap semiconductor rf power devices
3. Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes
4. Doping of SiC by Implantation of Boron and Aluminum
5. Donor ion-implantation doping into SiC
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