Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes-Reference-Cited by-同舟云学术

Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes

Published:1998-04 Issue:4 Volume:27 Page:358-364
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Kimoto T.,Takemura O.,Matsunami H.,Nakata T.,Inoue M.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-998-0415-6.pdf

Reference19 articles.

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3. M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer and J.J. Kopanski, Appl. Phys. Lett. 63, 1206 (1993).

4. M.V. Rao, P. Griffiths, O.W. Holland, G. Kelner, J.A. Freitas, Jr., D.S. Simons, P.H. Chi and M. Ghezzo, J. Appl. Phys. 77, 2479 (1995).

5. G. Pensl, V.V. Afanas’ev, M. Bassler, M. Schadt, T. Troffer, J. Heindl, H.P. Strunk, M. Maier and W.J. Choyke, Silicon Carbide and Related Materials 1995 (Bristol, U.K.: Institute of Phys., 1996), p. 275.

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