Free Growth of 4H-SiC by Sublimation Method-Reference-Cited by-同舟云学术

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Free Growth of 4H-SiC by Sublimation Method

Published:2004-06 Issue: Volume:457-460 Page:71-74
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Dedulle Jean Marc¹,Anikin Mikhail²,Pons Michel¹,Blanquet Elisabeth²,Pisch Alexander²,Madar Roland³,Bernard Claude²

Affiliation:

1. Grenoble INP–CNRS-UJF

2. Domaine Universitaire

3. UMR CNRS 5628, INP Grenoble-MINATEC

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.71.pdf

Reference8 articles.

1. M. Pons, M. Anikin, K. Chourou, J.M. Dedulle, R. Madar et al., Mat. Sci. and Eng., B61-62, (1999), p.18.

2. M. V. Bogdanov, S. E. Demina, S. Yu Karpov, A. V. Kulik, M.S. Ramm, Yu. N. Makarov, Cryst. Res. Technol. 38 n° 3-5, (2003), p.237.

3. R. -H. Ma, H. Zhang, S. Ha, M. Skowronski, J. Crystal Growth, 252, (2003), p.523.

4. K. Böttcher, D. Schulz, J. Crystal Growth, 237-239, (2002), p.1196.

5. R. Ma, H. Zhang, V. Prasad, M. Duddley, Crystal growth and Design, Vol. 2 n°3, (2002), p.213.

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1. Critical evaluation and thermodynamic optimization of the Si-N, Si-C, C-N and Si-C-N systems and its applications to high purity SiC production;Journal of the European Ceramic Society;2022-09

2. Review of SiC crystal growth technology;Semiconductor Science and Technology;2018-09-05

3. Structural transformation of lattice defects in free-spreading growth of bulk SiC crystals;CrystEngComm;2014-08-15

4. Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter;Materials Science Forum;2012-05

5. The Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT Method;Materials Science Forum;2011-03

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