Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC
Author:
Affiliation:
1. Griffith University
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.457-460.1365.pdf
Reference11 articles.
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2. S. Dimitrijev, K.Y. Cheong, J. Han, and H.B. Harrison: Appl. Phys. Lett. Vol 80 (2002) p.3421.
3. K.Y. Cheong and S. Dimitrijev: Proc. 3rd International Conference on Recent Advances in Materials, Minerals and Environment 2003, p.44.
4. K.Y. Cheong, S. Dimitrijev, and J. Han: IEEE Trans. Electron Dev. Vol. 50 (2003) p.1433.
5. R.N. Hall: Phys. Rev. Vol. 87 (1952) p.387. W. Shockley and W.T. Read Jr.: Phys. Rev. Vol. 87 (1952) p.835.
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