Charge retention in metal–oxide–semiconductor capacitors on SiC used as nonvolatile-memory elements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1476060
Reference7 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Statistics of the Recombinations of Holes and Electrons
3. Dynamic charge storage in 6H silicon carbide
4. Physical properties of N2O and NO-nitrided gate oxides grown on 4H SiC
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