Contact engineering of single core/shell SiC/SiO2 nanowire memory unit with high current tolerance using focused femtosecond laser irradiation-Reference-Cited by-同舟云学术

Contact engineering of single core/shell SiC/SiO2 nanowire memory unit with high current tolerance using focused femtosecond laser irradiation

Published:2020 Issue:9 Volume:12 Page:5618-5626
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Lin Luchan¹²³⁴⁵^ORCID,Huo Jinpeng¹²³⁴,Peng Peng⁶⁷⁸⁴^ORCID,Zou Guisheng¹²³⁴,Liu Lei¹²³⁴,Duley Walt W.⁹¹⁰¹¹¹²,Zhou Y. Norman¹³¹⁰¹¹¹²^ORCID

Affiliation:

1. Department of Mechanical Engineering

2. Tsinghua University

3. Beijing 100084

4. P.R. China

5. Empa

6. School of Mechanical Engineering and Automation

7. Beihang University

8. Beijing 100191

9. Department of Physics and Astronomy

10. University of Waterloo

11. Waterloo N2L 3G1

12. Canada

13. Department of Mechanical and Mechatronics Engineering

Abstract

Single nanowire memory unit is developed with precise contact engineering on metal–oxide–semiconductor heterojunction by using the localized plasmonic effects.

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Natural Sciences and Engineering Research Council of Canada

Canada Research Chairs

H2020 Marie Skłodowska-Curie Actions

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/C9NR10690A

Reference45 articles.

1. High-Performance SiC Nanobelt Photodetectors with Long-Term Stability Against 300 °C up to 180 Days

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4. Observation of conducting filament growth in nanoscale resistive memories

5. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

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