High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors-Reference-Cited by-同舟云学术

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High Power (500V-70A) and High Gain(44-47) 4H-SiC Bipolar Junction Transistors

Published:2004-06 Issue: Volume:457-460 Page:1149-1152
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Zhang Jian Hui¹,Alexandrov Petre²,Zhao Jian Hui¹

Affiliation:

1. Rutgers University

2. United Silicon Carbide

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.1149.pdf

Reference10 articles.

1. S. Ryu, A.K. Agarwal, R. Singh, J.W. Palmour: 58th IEEE Dev. Res. Conf. Digest, (2000), p.133.

2. Y. Tang, J.B. Fedsion, T.P. Chow: 58 th IEEE Dev. Res. Conf. Digest(2000), p.131.

3. Y. Luo, L. Fursin, J.H. Zhao: IEE Elec. Lett. Vol. 36(17) (2000), p.1496.

4. S. Ryu, A.K. Agarwal, R. Singh, J.W. Palmour: IEEE Elec. Dev. Lett, Vol. 22, (2001), pp.124-126.

5. C. Huang, J. A. Cooper Jr: Proc. of the 14th ISPSD(2002), p.57.

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiC and GaN Power Semiconductor Devices;Power Electronics Handbook;2018

2. Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs, and GTOs;Silicon Carbide;2011-03-28

3. Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs;physica status solidi (a);2009-09-24

4. 1600 V, 5.1 mΩ●cm² 4H-SiC BJT with a High Current Gain of β=70;Materials Science Forum;2008-09

5. Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors;IEEE Transactions on Electron Devices;2008-08

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