Affiliation:
1. National Institute of Advanced Industrial Science and Technology (AIST)
2. National Institute of Advanced Science and Technology (AIST)
3. Okayama University
Abstract
Homoepitaxial growth was carried out on 4H-SiC on-axis substrate by horizontal hot wall chemical vapor deposition. By using carbon face substrate, specular surface morphology of a wide area of up to 80% of a 2-inch epitaxial wafer was obtained at a low C/Si ratio growth condition of 0.6. The Micropipe in on-axis substrate was indicated to be filled with spiral growth and to be dissociated into screw dislocations during epitaxial growth. It was found that the appearance of basal plane
dislocations on the epitaxial layer surface can be prevented by using an on-axis substrate.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. H. Lendenmann, F. Dahlquist, N. Johansson, R. Soderholm, P. A. Nilsson, J. P. Bergman and P. Skytt, Mater. Sci. Forum Vol. 353-356 (2000), p.727.
2. G. Augustine, H. McD. Hobgood, V. Balakrishna, G. Dunne and R. H. Hopkins, Phys. Stat. Sol. (b) Vol. 202 (1997) , p.137.
3. C. Hallin, F. Owman, P. Martensson, A Ellison, A. Konstantinov, O. Kordina, and E. Janzén, J. Crystal Growth Vol. 181 (1997), p.241.
4. K. Masahara, M. Kushibe, H. Ohno, K. Kojima, T. Takahashi, Y. Ishida, T. Suzuki, T. Tanaka, S. Yoshida and K. Arai, Mater. Sci. Forum Vol. 353-356 (2000), p.135.
5. S. Nakamura, T. Kimoto and H. Matsunami, Jpn. J. Appl. Phys. Vol. 42 (2003), p. L846.
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