Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation-Reference-Cited by-同舟云学术

Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation

Published:2006-09 Issue:5 Volume:100 Page:053710
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hijikata Yasuto,Yaguchi Hiroyuki,Yoshida Sadafumi,Takata Yasutaka,Kobayashi Keisuke,Nohira Hiroshi,Hattori Takeo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2345471

Reference35 articles.

1. Epitaxial Growth, Characterization, and Properties of SiC

2. Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(0001̄) face

3. Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition

4. Homoepitaxial growth of 4H-SiC on on-axis C-face substrates by chemical vapor depositon

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