Dislocation Revelation from ($000\bar{1}$) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature-Reference-Cited by-同舟云学术

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Dislocation Revelation from ($000\bar{1}$) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature

Published:2012-06-22 Issue:7 Volume:5 Page:075601
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Yao Yong-Zhao,Ishikawa Yukari,Sato Koji,Sugawara Yoshihiro,Danno Katsunori,Suzuki Hiroshi,Bessho Takeshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=7/a=075601/pdf

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01

2. Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights;Journal of Semiconductors;2024-01-01

3. Dislocations in 4H silicon carbide;Journal of Physics D: Applied Physics;2022-09-23

4. Etch pit formation on β-Ga2O3 by molten KOH+NaOH and hot H3PO4 and their correlation with dislocations;Journal of Alloys and Compounds;2022-07

5. Contribution of Dislocations in SiC Seed Crystals on the Melt-Back Process in SiC Solution Growth;Materials;2022-02-27

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