Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers
Author:
Affiliation:
1. Université Montpellier 2 and CNRS
2. Université Montpellier
3. Université Montpellier 2
4. Université Claude Bernard Lyon 1
5. Université de Lyon
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.457-460.577.pdf
Reference12 articles.
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3. H. Iwata, U. Lindefelt, S. Oberg and P.R. Briddon: J. Phys. Cond. Matter 14 (2002), p.12733.
4. C. Sartel et al: Paper ThP1-5, this conference.
5. S. Bai, G. Wagner, E. Shishkin, W.J. Choyke, R.P. Devaty, M. Zhang, P. Pirouz and T. Kimoto: Materials Sci. Forum Vol. 389-393 (2002), p.589.
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1. Optical Properties of As-Grown and Process-Induced Stacking Faults in 4H-SiC;Silicon Carbide;2011-03-28
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3. Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers;Journal of Physics D: Applied Physics;2007-10-05
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