Phosphorus Diffusion Gettering of Metallic Impurities in Silicon: Mechanisms beyond Segregation-Reference-Cited by-同舟云学术

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Phosphorus Diffusion Gettering of Metallic Impurities in Silicon: Mechanisms beyond Segregation

Published:2003-09 Issue: Volume:95-96 Page:527-538
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Schröter Wolfgang¹,Döller A.²,Zozime A.³,Kveder Vitaly V.⁴,Seibt Michael²,Spiecker E.⁵

Affiliation:

1. IV. Physikalisches Institut der Universität Göttingen

2. Universität Göttingen

3. Université d'Evry-Val-d'Essonne

4. Russian Academy of Sciences

5. Mikrostrukturanalytik, Universität Kiel

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.95-96.527.pdf

Reference49 articles.

1. S. Myers, M. Seibt, and W. Schröter, J Appl. Phys. 88, 3795 (2000).

2. R. Thomson and K. Tu, Appl. Phys. Lett. 41, 441 (1982).

3. M. Apel, I. Hanke, R. Schindler, and W. Schröter, J. Appl. Phys. 76, 4432 (1994).

4. T. Y. Tan, R. Grafiteanu, S. M. Joshi, and U. Goesele, Electrochem Soc. Proc. 98-1, 1051 (1998).

5. H. Hieslmair, S. Balasubramanian, A. Istratov, and E. Weber, Semicond. Sci. Technol. 16, 567 (2001).

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