High Dose High Temperature Ion Implantation of Ge into 4H-SiC
Author:
Affiliation:
1. Institut für Mikro- und Nanotechnologien, TU Ilmenau
2. TU Ilmenau
3. Forschungszentrum Dresden
4. Helmholtz-Center Dresden-Rossendorf
5. Technische Universität Ilmenau
Abstract
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.527-529.851.pdf
Reference23 articles.
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2. Y. Pacaud, J. Stoemenos, G. Brauer, R. Yankov, V. Heera, M. Voelskow, R. Kögler and W. Skorupa: Nucl. Instr. Meth. Vol. B120 (1996), p.177.
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4. Ch. Schubert, U. Kaiser, A. Hedler, W. Wesch, T. Gorelik, U. Glatzel, J. Kräußlich, B. Wunderlich, G. Heß and K. Goetz: J. Appl. Phys. Vol. 91 (2002), p.1520.
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Positron annihilation study of 4H-SiC by Ge+ implantation and subsequent thermal annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-01
2. Structure and Lattice Location of Ge Implanted 4H-SiC;Materials Science Forum;2008-09
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