Positron annihilation study of 4H-SiC by Ge+ implantation and subsequent thermal annealing
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. Microstructure evolution of Ge+ implanted silicon oxide thin films upon annealing treatments
2. Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Germanium implantation
3. Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing
4. Nanocrystal formation in hexagonal SiC after Ge+ ion implantation
5. Ion track effect on point defect production in SiC
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