Microstructure evolution of Ge+ implanted silicon oxide thin films upon annealing treatments-Reference-Cited by-同舟云学术

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Microstructure evolution of Ge+ implanted silicon oxide thin films upon annealing treatments

Published:2009-09 Issue:18 Volume:267 Page:3097-3099
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yu R.S.,Maekawa M.,Kawasuso A.,Sekiguchi T.,Wang B.Y.,Qin X.B.,Wang Q.Z.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. The origin of photoluminescence in Ge-implanted SiO2 layers

2. Microstructural and photoluminescence studies of germanium nanocrystals in amorphous silicon oxide films

3. Positron annihilation in SiO2–Si studied by a pulsed slow positron beam

4. Positronium as a Probe of Small Free Volumes

5. Physical and electrical properties of Ge-implanted SiO2 films

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Positron annihilation study of 4H-SiC by Ge+ implantation and subsequent thermal annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-01

2. Spectroscopic ellipsometry and positron annihilation investigation of sputtered HfO2 films;Thin Solid Films;2011-07

3. Structural Characterisation of Er Implanted, Ge-Rich SiO₂ Layers Using Slow Positron Implantation Spectroscopy;Materials Science Forum;2010-12

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