Pseudomorphic SiC alloys formed by Ge ion implantation-Reference-Cited by-同舟云学术

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Pseudomorphic SiC alloys formed by Ge ion implantation

Published:2004-09-20 Issue:12 Volume:85 Page:2253-2255
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dashiell M. W.,Xuan G.,Ansorge E.,Zhang X.,Kolodzey J.,DeSalvo G. C.,Gigante J. R.,Malkowski W. J.,Clarke R. C.,Liu J.,Skowronski M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1791741

Reference12 articles.

1. Electrical and optical properties of Ge–implanted 4H–SiC

2. Silicon carbide and silicon carbide:germanium heterostructure bipolar transistors

3. Experimental study of Si substitution by Ge in Ge-alloyed SiC epitaxial growth on6H−SiC(0001)

4. X-ray investigations of MBE-grown heteroepitaxial SiC layers on 6H–SiC substrates

5. Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of helium ion radiation on the nano-grained Li2TiO3 ceramic for tritium breeding;Ceramics International;2021-10

2. Growth and doping of silicon carbide with germanium: a review;Critical Reviews in Solid State and Materials Sciences;2021-03-24

3. Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition;Acta Materialia;2014-08

4. Effects of strain on the electrical properties of silicon carbide;Journal of Applied Physics;2013-07-07

5. Band tailing effects in neon-implanted GaN;Journal of Applied Physics;2009-12-15

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