Abstract
High voltage SiC semiconductor devices have been successfully fabricated and some of
them are commercially available [1]. To achieve experimental breakdown voltage values as close as
possible to the theoretical value, i.e. value of the theoretical semi-infinite diode, it is necessary to
protect the periphery of the devices against premature breakdown due to locally high electric fields.
Mesa structures and junction termination extension (JTE) as well as guard rings, and combinations
of these techniques, have been successfully employed. Each of them has particular drawbacks.
Especially, JTE are difficult to optimize in terms of impurity dose to implant, as well as in terms of
geometric dimensions. This paper is a study of the spreading of the electric field at the edge of
bipolar diodes protected by JTE and field rings, by optical beam induced current.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference5 articles.
1. SiCED Electronics Development GmbH, http: /www. siced. de.
2. C. Raynaud, S.R. Wang, D. Planson, M. Lazar, J.P. Chante: Diamond and Related Materials, Vol. 13/9 (2004), p.1697.
3. R. Perez Rodriguez: Planar edge terminations and related manufacturing process technology for high power 4H-SiC diodes,. Ph.D. thesis. Universitat Autonoma de Barcelona, (2005), p.223.
4. V. V. Afanasev et al.: Microelectronic Engin. Vol. 28 (1995), p.197.
5. C. Raynaud: J. Non-Crystalline Solids Vol. 280 (2001), p.1.
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