OBIC analysis for 1.3 kV 6H–SiC p+n planar bipolar diodes protected by Junction Termination Extension-Reference-Cited by-同舟云学术

OBIC analysis for 1.3 kV 6H–SiC p+n planar bipolar diodes protected by Junction Termination Extension

Published:2004-09 Issue:9 Volume:13 Page:1697-1703
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Raynaud C,Wang S.-R,Planson D,Lazar M,Chante J.-P

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference17 articles.

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2. Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour, T. Hayashi. Proc. ISPSD'01, Osaka (2001) p. 27

3. OBIC measurements on planar high voltage p+-n junctions with diamond-like carbon films as passivation layer

4. K. Rottner, S. Savage, J. André, L. Ramberg, M. Frischholz, R. Helbig. Proceedings of the International Conference on SiC and Related Materials, Kyoto (Japan), September 18–21 1995, Institute of Physics Publishing, Conference Series no. 142 (1996) p. 721

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