Affiliation:
1. Japan Atomic Energy Agency JAEA
2. Central Research Institute of Electric Power Industry
3. Central Research Institute of Electric Power Industry (CRIEPI)
Abstract
The performance of SiC MOSFET devices to date is below theoretically expected
performance levels. This is widely considered to be attributed to defect at the SiO2/SiC interface that
degrade the electrical performance of the device. To analyze the relationship between defect
structures near the interface and electrical performances, advanced computer simulations were
performed. A slab model using 444 atoms for an amorphous oxide layer on a 4H-SiC (0001) substrate
was made by using first-principles molecular dynamic simulation code optimized for the
Earth-Simulator. Simulated heating and rapid quenching was performed for the slab model in order to
obtain a more realistic structure and electronic geometry of a-SiO2/4H-SiC interface. The heating
temperature, the heating time and the speed of rapid quenching were 4000 K, 3.0 ps and -1000 K/ps,
respectively. The interatomic distance and the bond angles of SiO2 layers after the calculation are
agree well with the most probable values of bulk a-SiO2 layers, and no coordination defects were
observed in the neighborhood of SiC substrate.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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