Interface States in SiO<sub>2</sub>/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination-Reference-Cited by-同舟云学术

Interface States in SiO₂/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination

Published:2005-05 Issue: Volume:483-485 Page:573-576
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Ohnuma Toshiharu¹,Tsuchida Hidekazu²,Jikimoto Tamotsu¹,Miyashita Atsumi³,Yoshikawa Masahito³

Affiliation:

1. Central Research Institute of Electric Power Industry

2. Central Research Institute of Electric Power Industry (CRIEPI)

3. Japan Atomic Energy Agency JAEA

Abstract

First-principles calculations for the abrupt SiO2/4H-SiC interfaces accounting for Si-Si bonding and Nitrogen atom termination have been performed. Interface states due to Si-Si bonds appear at the valence band edge. Interface states at the midgap vanish when N atom terminates the Si dangling bond, but the interface states arising from the Si-N bonds appear at the valence band edge at the same time.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.483-485.573.pdf

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