Ab initiotheoretical study of an oxygen vacancy defect at the4H-SiC(0001)/SiO2interface-Reference-Cited by-同舟云学术

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Ab initiotheoretical study of an oxygen vacancy defect at the4H-SiC(0001)/SiO2interface

Published:2009-03-25 Issue:11 Volume:79 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Okuno Eiichi,Sakakibara Toshio,Onda Shoichi,Itoh Makoto,Uda Tsuyoshi

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.79.113302/fulltext

Reference19 articles.

1. Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

2. Intrinsic SiC/SiO2 Interface States

3. Identification of the Carbon Dangling Bond Center at the4H−SiC/SiO2Interface by an EPR Study in Oxidized Porous SiC

4. Bonding at theSiC−SiO2Interface and the Effects of Nitrogen and Hydrogen

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing;Applied Physics Letters;2023-09-04

2. Impact of post-nitridation annealing in CO₂ ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors;Applied Physics Express;2022-05-24

3. Reparametrization-Invariant Reaction–Diffusion Equation as the Model of the Thermal Oxidation of Si;Journal of the Physical Society of Japan;2020-06-15

4. Positive flatband voltage shift in phosphorus doped SiO2/N-type 4H-SiC MOS capacitors under high field electron injection;Journal of Physics D: Applied Physics;2019-09-25

5. Correlation Analysis and Characterization of Micromorphology and Optoelectronic Properties of SiO2/SiC in Pressure Sensor;2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA);2019-07

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