CM-Wave Modulator with High-Voltage 4H SiC pin Diodes

Abstract

The results of mathematical simulation, development and investigation of a modulator with 4H SiC pin diodes are presented. We simulated the effect of bias modes on isolation and transmission between the modulator input and output in the 1−20 GHz frequency range, for pin diodes with 6 μm long i-region. It was calculated that the isolation in a modulator with three diodes may run into –45 dB, the transmission losses being no more than 2 dB. The modulator was made as an integrated circuit (IC) on the basis of nonsymmetrical strip lines (characteristic impedance of 50 Ω) incorporating chips of high-voltage 4H SiC pin diodes with iregion 6 μm long, mesa diameter of 60 μm and calculated avalanche breakdown voltage of 1000 V. We studied the experimental parameters of this modulator as a function of forward current and reverse voltage in the 2.4−12 GHz frequency range, as well as the microwave signal switching behavior. It was determined that the modulator is characterized by transmission losses of 1.0−2.0 dB and isolation of 27−34 dB (in the 2.4−7 GHz frequency range). The formation of microwave pulses with leading (trailing) edge of 22 (29) ns was also observed.