Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes
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Published:2008-09
Issue:
Volume:600-603
Page:1019-1022
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Zekentes Konstantinos1,
Basanets Volodymyr V.2,
Boltovets Mykola S.2,
Kryvutsa Valentyn A.2,
Orechovskij Volodymyr O.2,
Simonchuk Vasyl I.2,
Zorenko Alexander V.2,
Romanov Leonid P.3,
Kirillov Aleksey V.3,
Bano Edwige4,
Camara Nicolas5
Affiliation:
1. Microelectronic Research Group (MRG)-IESL
2. State Enterprise Research Institute "ORION"
3. Svetlana-Electronpribor
4. MINATEC
5. Campus Universidad Autonóma de Barcelona
Abstract
Multi-diode broadband microwave signal modulators based on 4H-SiC p-i-n diodes were
fabricated and fully characterized. The three-diode modulators are characterized by a transmission
loss of 1-2 dB and isolation of 27-34 dB in the 2-7 GHz frequency range. Two-diode modulators were
specially designed for high-temperature operation. These modulators are characterized by a
transmission loss of 1.1-2.6 dB and isolation of 33-44.5 dB, in the 2-7 GHz frequency range at
temperatures up to 300°C.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science