Affiliation:
1. State Enterprise Research Institute "ORION"
2. Foundation for Research and Technology Hellas
3. Foundation for Research and Technology-Hellas(FORTH)
Abstract
The packaged microwave 4H SiC pin diode chips (with i-region length of 6 μm, mesa
diameter of 80 μm and blocking voltage of 1000 V) were investigated. We studied the parameters
of diode I−V curve (in particular, the diode resistance RS at forward current) and the processes of
diode switching from forward current of 50 mA to reverse voltage of 15 V, as well as C−V curves,
in the 20−700 °C temperature range.
At a voltage of 300 V, the diode reverse current was 10 (180) μA when temperature was
600 (700) °C. At a forward current of 40 mA, the diode resistance first decreases smoothly as
temperature is increased from 20 up to 300 °C, and then grows up. As temperature is increased from
20 up to 700 °C, the effective lifetime τeff grows from 7 up to 50 ns, while the diode capacitance (in
the 0−40 V reverse voltage range) grows smoothly as temperature is increased from 20 up to
400 °C.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference6 articles.
1. K.V. Vassilevski, K. Zekentes, A.V. Zorenko and L.P. Romanov: IEEE Electron Device Letters. Vol. 21, No. 10 (October 2000), pp.485-487.
2. M.S. Boltovets, V.V. Basanets, N. Camara, V.A. Krivutsa, and K. Zekentes: Mat. Sci. Forum. Vol. 483-485 (2005), p.997.
3. H.V. Shurmer: Microwave Semiconductor Devices: Britain, at the Pitman Press (1971), p.141.
4. S.M. Sze: Physics of Semiconductor Devices (Second Edition): John Wiley & Sons, Inc., New York−Chichester−Brisbane−Toronto−Singapore (1981).
5. V.P. Grigorenko, P.G. Dermenzhi, V.A. Kuzmin, and T.T. Mnatsakanov: Simulation and Automation of High-power Semiconductor Devices: Energoatomizdat, Moscow, 1988 (in Russian).
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献