Abstract
Abstract. Mobility is one of the most important properties of semiconductor material, and it has a great impact on the property of MOS devices.In this paper, the influence of ionizing impurity scattering, acoustic phonon scattering and intervalley scattering to strained-Si(101) material is discussed.In addition, a calculation of the electron mobility in Strained-Si(101) material is made using the average momentum relaxation time method described in Ref[1]. The results show that the electron mobility increases gradually for both [001] and [100] orientations while for [010] orientation increases rapidly with the increasing Ge fraction x.
Publisher
Trans Tech Publications, Ltd.
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