1. Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
2. L.-J. Huang, J. Chu, S. Goma, C. Emic, S. Koester, D. Canaperi, P. Mooney, S. Cordes, J. Speidell, R. Anderson, H. Wong, in: VLSI Symp. Tech. Dig., 2001, pp. 57–58
3. N. Sugii, D. Hisamoto, K. Washio, N. Yokoyama, S. Kimura, in: IEDM Tech. Dig., 2001, pp. 737–740
4. K. Rim, J. Chu, H. Chen, K. Jenkins, T. Kanarsky, K. Lee, A. Mocuta, H. Zhu, R. Roy, J. Newbury, J. Ott, K. Petrarca, P. Mooney, D. Lacey, S. Koester, K. Chan, D. Boyd, M. Ieong, H. Wong, in: VLSI Symp. Tech. Dig., 2002, pp. 98–99
5. A 90-nm Logic Technology Featuring Strained-Silicon