Abstract
Nowadays, the strained-Si technology has been used to maintain the momentum of semiconductor scaling due to its enhancement performance result from the higher mobility. In this paper, the influence of ionizing impurity scattering, acoustic phonon scattering and intervalley scattering to strained-Si (101) material is discussed.In addition, a calculation of the electron mobility in Strained-Si (101) material is made using the average momentum relaxation time method described in Ref [1]. The results show that the electron mobility increases gradually for both [001] and [100] orientations while for [010] orientation increases rapidly with the increasing Ge fraction x.[1]
Publisher
Trans Tech Publications, Ltd.
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