Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC-Reference-Cited by-同舟云学术

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Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC

Published:1998-02 Issue: Volume:264-268 Page:685-688
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Itoh Hisayoshi¹,Troffer T.,Pensl Gerhard²

Affiliation:

1. Japan Atomic Energy Agency

2. Friedrich-Alexander-Universität Erlangen-Nürnberg

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.264-268.685.pdf

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Incomplete ionization in aluminum-doped 4H-silicon carbide;Journal of Applied Physics;2019-10-14

2. Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing;Materials Science Forum;2007-09

3. Carrier compensation near tail region in aluminum- or boron-implanted 4H–SiC (0001);Journal of Applied Physics;2005-08-15

4. Microstructural and electrical resistance analysis of laser-processed SiC substrates for wide bandgap semiconductor materials;Journal of Materials Science;2005-08

5. Electrical activation of high-concentration aluminum implanted in 4H-SiC;Journal of Applied Physics;2004-11

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