Carrier compensation near tail region in aluminum- or boron-implanted 4H–SiC (0001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2030411
Reference27 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Yu. A. Vodakov and E. N. Mokhov,Silicon Carbide1973 (University of South Carolina Press, Columbia, SC, 1974), p. 508.
3. Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC
4. Phosphorus implantation into 4H-silicon carbide
5. Electronic behaviors of high-dose phosphorus-ion implanted 4H–SiC (0001)
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